BSC0908NS Infineon Technologies, BSC0908NS Datasheet
BSC0908NS
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BSC0908NS Summary of contents
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... Pow FET OptiMOS™ BSC0908NS heet 3.1, 2010-10-18 Final I ndus & ark et ...
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... BSC0908NS PG-TDSON-8 1) J-STD20 and JESD22 Final Data Sheet @ V =4 for given R oss DS(on) 1) for target applications Unit Marking 0908NS 1 OptiMOS™ Power-MOSFET BSC0908NS Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools 3.1, 2010-10-18 ...
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... Symbol Values Min. Typ thJC thJA 2 (one layer, 70 µm thick) copper area for drain connection. 2 OptiMOS™ Power-MOSFET BSC0908NS Unit Note / Test Condition =25 ° = =100 ° =4 =25 ° =4 =100 °C ...
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... GS(th 0.1 DSS - GSS R - 10.2 DS(on Symbol Values Min. Typ 1220 iss C - 445 oss rss t - 4.6 d(on 2 16.4 d(off 2 OptiMOS™ Power-MOSFET BSC0908NS Electrical characteristics Unit Note / Test Condition Max =1 2 =250 µ µA = =25 ° 100 = =125 ° 100 nA = 12 =10 V, ...
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... Final Data Sheet 1) Symbol Values Min. Typ 3 1.8 g( 3.4 plateau 5.9 g(sync oss Symbol Values Min. Typ S,pulse OptiMOS™ Power-MOSFET BSC0908NS Electrical characteristics Unit Note / Test Condition Max = = 10V Unit Note / Test Condition Max =25 °C C 108 ...
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... Electrical characteristics diagrams Table 8 1 Power dissipation tot C Table Safe operating area =25 ° =f =25 °C; D=0; parameter Final Data Sheet 2 Drain current I =f(T ); parameter Max. transient thermal impedance Z =f(t ); parameter: D=t p (thJC OptiMOS™ Power-MOSFET BSC0908NS Electrical characteristics diagrams : 3.1, 2010-10-18 ...
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... Typ. output characteristics I =f =25 °C; parameter Table 11 7 Typ. transfer characteristics I =f(VGS); |V |>2 DS(on)max Final Data Sheet T =25 °C 6 Typ. drain-source on-state resistance C R =f(I GS DS(on) 8 Typ. forward transconductance g =f OptiMOS™ Power-MOSFET BSC0908NS Electrical characteristics diagrams ); T =25 °C; parameter =25 °C j 3.1, 2010-10-18 ...
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... Table 12 9 Drain-source on-state resistance =10 V DS(on Table 13 11 Typ. capacitances C=f f=1 MHz DS GS Final Data Sheet OptiMOS™ Power-MOSFET Electrical characteristics diagrams 10 Typ. gate threshold voltage V =f =250 µA GS(th Forward characteristics of reverse diode I =f(V ); parameter BSC0908NS 3.1, 2010-10-18 ...
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... Table 14 13 Avalanche characteristics I =f =25 parameter Table 15 15 Drain-source breakdown voltage V =f BR(DSS Final Data Sheet 14 Typ. gate charge V =f(Q j(start) GS gate 16 Gate charge waveforms 8 OptiMOS™ Power-MOSFET BSC0908NS Electrical characteristics diagrams ); I =30 A pulsed; parameter 3.1, 2010-10-18 ...
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... Package outline Figure 1 Outlines PG-TDSON-8, dimensions in mm/inches Final Data Sheet OptiMOS™ Power-MOSFET 9 BSC0908NS Package outline 3.1, 2010-10-18 ...
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... Figure 2 Outlines PG-TDSON-8 tape, dimension in mm/inches Final Data Sheet OptiMOS™ Power-MOSFET 10 BSC0908NS Package outline 3.1, 2010-10-18 ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet OptiMOS™ Power-MOSFET erratum@infineon.com 11 BSC0908NS Revision History 3.1, 2010-10-18 ...