BSC0908NS Infineon Technologies, BSC0908NS Datasheet - Page 12

• Manufacturer Part Number: BSC0908NS
• Description: MOSFET N-CH 34V 49A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC0908NS

• Input Capacitance (ciss) @ Vds: 1220pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 34V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.7 mOhms
• Forward Transconductance Gfs (max / Min): 56 S, 28 S
• Drain-source Breakdown Voltage: 34 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC0908NSTR

7
Revision History: 2010-10-18, 3.1
Previous Revision:
Revision
2.0
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Edition 2010-10-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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Final Data Sheet
0.9
Release Final version
Subjects (major changes since last revision)
Release of target data sheet
Revision History
11
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OptiMOS™ Power-MOSFET
Revision History
3.1, 2010-10-18
BSC0908NS