BSC0908NS Infineon Technologies, BSC0908NS Datasheet - Page 2

• Manufacturer Part Number: BSC0908NS
• Description: MOSFET N-CH 34V 49A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC0908NS

• Input Capacitance (ciss) @ Vds: 1220pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 34V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.7 mOhms
• Forward Transconductance Gfs (max / Min): 56 S, 28 S
• Drain-source Breakdown Voltage: 34 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC0908NSTR

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OptiMOS™30V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 30V
the best choice forthe demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performancepackages to tackle your
most challenging applications giving full flexibility in optimizing space- efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
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Applications
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Table 1
Q
Q
1) J-STD20 and JESD22
Final Data Sheet
Parameter
V
R
I
Type
BSC0908NS
D
OSS
g
DS
DS(on),max
.
typ
Optimized for high performance Buck converter
100% avalanche tested
Very low on-resistance R
Ultra low gate (Q
Qualified according to JEDEC
Superior thermal resistance
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Description
Key Performance Parameters
g
) and output charge (Q
Value
34
8
49
11
6.8
Package
PG-TDSON-8
DS(on)
1)
@ V
for target applications
GS
=4.5 V
Unit
V
m
A
nC
nC
oss
) for given R
Marking
1
0908NS
DS(on)
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
OptiMOS™ Power-MOSFET
3.1, 2010-10-18
BSC0908NS