BSC0908NS Infineon Technologies, BSC0908NS Datasheet - Page 3

• Manufacturer Part Number: BSC0908NS
• Description: MOSFET N-CH 34V 49A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC0908NS

• Input Capacitance (ciss) @ Vds: 1220pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 34V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.7 mOhms
• Forward Transconductance Gfs (max / Min): 56 S, 28 S
• Drain-source Breakdown Voltage: 34 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC0908NSTR

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
3
Table 3
Parameter
Thermal resistance, junction - case
Device on PCB
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
Final Data Sheet
T
PCB is vertical in still air.
PCB is vertical in still air
j
See figure 3 for more detailed information
= 25 °C, unless otherwise specified.
Maximum ratings
Maximum ratings
Thermal characteristics
Thermal characteristics
2)
Symbol
R
R
Symbol
I
I
I
E
V
P
T
D
D,pulse
AS
thJC
thJA
j
AS
GS
tot
,T
stg
Min.
-
-
Min.
-
-
-
-
-20
-
-55
55
2
Typ.
-
-
Typ. Max.
-
-
-
-
-
-
-
150
2
2
Values
(one layer, 70 µm thick) copper area for drain connection.
Values
(one layer, 70 µm thick) copper area for drain connection.
49
31
39
25
14
196
35
10
20
30
2.5
150
56
Max.
4.2
20
50
OptiMOS™ Power-MOSFET
Unit
A
mJ
V
W
°C
Ncm
Unit
°K/W
Note / Test Condition
V
V
V
V
V
R
T
I
T
T
D
C
C
A
GS
GS
GS
GS
GS
thJA
=30 A,R
=25 °C
=25 °C
=25 °C, R
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V, T
=10 V, T
Note /
Test Condition
bottom
top
=50 K/W
6 cm
GS
2
3.1, 2010-10-18
BSC0908NS
cooling area
=25
thJA
C
C
A
C
C
=25 °C
=100 °C
=25 °C,
1)
=25 °C
=100 °C
)
=50 K/W
1)
1)
)