NAND512W3A2SN6E NUMONYX, NAND512W3A2SN6E Datasheet - Page 31

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NAND512W3A2SN6E

Manufacturer Part Number
NAND512W3A2SN6E
Description
IC FLASH 512MBUT 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND512W3A2SN6E

Format - Memory
FLASH
Memory Type
FLASH - NAND
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

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Numonyx SLC SP 70 nm
7.6
7.6.1
7.6.2
Hardware simulation models
Behavioral simulation models
Denali software corporation models are platform independent functional models designed to
assist customers in performing entire system simulations (typical VHDL/Verilog). These
models describe the logic behavior and timings of NAND Flash devices, and so allow
software to be developed before hardware.
IBIS simulations models
IBIS (I/O buffer information specification) models describe the behavior of the I/O buffers
and electrical characteristics of Flash devices.
These models provide information such as AC characteristics, rise/fall times and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models are used to simulate PCB connections and can be used to resolve compatibility
issues when upgrading devices. They can be imported into SPICETOOLS.
210403 - Rev 2
Software algorithms
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