NAND512W3A2SN6E NUMONYX, NAND512W3A2SN6E Datasheet - Page 32

• Manufacturer Part Number: NAND512W3A2SN6E
• Description: IC FLASH 512MBUT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND512W3A2SN6E

• Format - Memory: FLASH
• Memory Type: FLASH - NAND
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Program and erase times and endurance cycles
8
9
Table 16.
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins. Maximum voltage
32/51
may overshoot to V
Symbol
T
T
V
T
V
LEAD
BIAS
IO
STG
DD
(1)
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Table 15.
Maximum ratings
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Absolute maximum ratings
Page program time
Block erase time
Program/erase cycles per block (with ECC)
Data retention
Table
Temperature under bias
Storage temperature
Lead temperature during soldering
Input or output voltage
Supply voltage
DD
15.
+ 2 V for less than 20 ns during transitions on I/O pins.
Program, erase times and program erase endurance cycles
Parameters
Parameter
210403 - Rev 2
1.8 V devices
1.8 V devices
3 V devices
3 V devices
100,000
Min
10
Table 16: Absolute maximum
NAND Flash
– 0.6
– 0.6
– 0.6
– 0.6
– 50
– 65
Min
Typ
200
2
Value
Numonyx SLC SP 70 nm
Max
125
150
260
Max
500
2.7
4.6
2.7
4.6
3
ratings, may
cycles
years
Unit
Unit
ms
µs
°C
°C
°C
V
V
V
V