NAND512W3A2SN6E NUMONYX, NAND512W3A2SN6E Datasheet - Page 43
NAND512W3A2SN6E
Manufacturer Part Number
NAND512W3A2SN6E
Description
IC FLASH 512MBUT 48TSOP
Manufacturer
NUMONYX
Datasheet
1.NAND512W3A2SN6E.pdf
(51 pages)
Specifications of NAND512W3A2SN6E
Format - Memory
FLASH
Memory Type
FLASH - NAND
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND512W3A2SN6E
Manufacturer:
DIODES
Quantity:
30 000
Company:
Part Number:
NAND512W3A2SN6E
Manufacturer:
ST
Quantity:
11 330
Company:
Part Number:
NAND512W3A2SN6E
Manufacturer:
MICRON
Quantity:
5 630
Part Number:
NAND512W3A2SN6E
Manufacturer:
MICRON/镁光
Quantity:
20 000
Numonyx SLC SP 70 nm
Figure 27. Block erase AC waveforms
Figure 28. Reset AC waveforms
RB
I/O
W
AL
CL
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
tWHBL
cycle 3
Add.
(Reset Busy time)
tBLBH4
210403 - Rev 2
Confirm
Code
D0h
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
DC and AC parameters
SR0
ai08043
ai08038b
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