BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 10
BLS6G2731-120
Manufacturer Part Number
BLS6G2731-120
Description
LDMOS,RF,120W,2700M-3100MHZ,32V
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G2731-120112.pdf
(12 pages)
Specifications of BLS6G2731-120
Drain Source Voltage Vds
60V
Continuous Drain Current Id
33A
Operating Frequency Range
1.2GHz To 1.4GHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
5 000
Company:
Part Number:
BLS6G2731-120,112
Manufacturer:
ZCOMM
Quantity:
1 400
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLS6G2731-120_6G2731S-120_1
Product data sheet
Document ID
BLS6G2731-120_6G2731S-120_1
Revision history
Table 10.
Acronym
LDMOS
LDMOST
RF
S-band
VSWR
Abbreviations
BLS6G2731-120; BLS6G2731S-120
Release date
20081114
Rev. 01 — 14 November 2008
Description
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Short wave Band
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
LDMOS S-band radar power transistor
Change notice
-
© NXP B.V. 2008. All rights reserved.
Supersedes
-
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