BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 4

• Manufacturer Part Number: BLS6G2731-120
• Description: LDMOS,RF,120W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 33A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 8.
The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
f
GHz
2.7
2.8
2.9
3.0
3.1
Fig 1.
Definition of transistor impedance
Typical impedance
DS
BLS6G2731-120; BLS6G2731S-120
= 32 V; I
Rev. 01 — 14 November 2008
Dq
= 100 mA; P
Z
3.4
3.8
4.7
6.3
8.8
S
j7.2
j5.9
j4.8
j4.1
j4.9
gate
Z
S
L
= 120 W; t
001aaf059
LDMOS S-band radar power transistor
Z
drain
L
p
= 100 s; = 10 %.
Z
4.6
3.8
3.0
2.3
1.8
L
j4.4
j4.6
j4.6
j4.3
j3.9
© NXP B.V. 2008. All rights reserved.
4 of 12