BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 2

• Manufacturer Part Number: BLS6G2731-120
• Description: LDMOS,RF,120W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 33A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLS6G2731-120_6G2731S-120_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLS6G2731-120 (SOT502A)
1
2
3
BLS6G2731S-120 (SOT502B)
1
2
3
Type number
BLS6G2731-120
BLS6G2731S-120 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
BLS6G2731-120; BLS6G2731S-120
Package
Name
-
Rev. 01 — 14 November 2008
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
[1]
[1]
LDMOS S-band radar power transistor
Simplified outline
1
2
1
2
3
Min
-
-
-
3
0.5
65
Graphic symbol
© NXP B.V. 2008. All rights reserved.
Max
60
+13
33
+150
225
2
2
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
Unit
V
V
A
C
C
2 of 12