BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 7

• Manufacturer Part Number: BLS6G2731-120
• Description: LDMOS,RF,120W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 33A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
Table 9.
See
BLS6G2731-120_6G2731S-120_1
Product data sheet
Component
C1, C2
C3
C4, C6, C9, C10
C5, C11
C7, C8
C12
C13
R1
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit
Figure
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with
See
10.
List of components
Table 9
for list of components.
C3
C1
C4
C5
R1
Description
multilayer ceramic chip capacitor 24 pF
multilayer ceramic chip capacitor 47 F; 20 V
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 100 pF
electrolytic capacitor
multilayer ceramic chip capacitor 10 F; 35 V
SMD resistor
C6
C7
BLS6G2731-120; BLS6G2731S-120
Rev. 01 — 14 November 2008
Value
47 F; 63 V
56
C8
C9
C10
LDMOS S-band radar power transistor
C11
Remarks
ATC 100A or equivalent
ATC 100A or equivalent
ATC 100A or equivalent
ATC 100B or equivalent
SMD 0603
r
= 6.15 and thickness = 0.64 mm.
C12
C2
C13
001aaj099
© NXP B.V. 2008. All rights reserved.
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