BUK653R7-30C NXP Semiconductors, BUK653R7-30C Datasheet - Page 7

• Manufacturer Part Number: BUK653R7-30C
• Description: MOSFET,N CH,30V,100A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK653R7-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK653R7-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(A)
I
I
D
D
100
80
60
40
20
80
60
40
20
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
Characteristics
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
6
1
5
0.5
4.5
T
j
2
= 175 °C
…continued
1
3
T
1.5
V
j
GS
= 25 °C
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
4
003aae307
DS
003aae306
(V) = 3.2
V
= 25 A; V
= 20 A; dI
V
DS
GS
Figure 16
= 25 V
(V)
(V)
3.6
3.4
3.3
4.0
3.8
Rev. 3 — 13 October 2010
2
5
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(mΩ)
R
(S)
g
DSon
125
100
fs
75
50
25
N-channel TrenchMOS intermediate level FET
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values.
Forward transconductance as a function of
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
25
4
BUK653R7-30C
Min
-
-
-
50
8
Typ
0.8
46
57
75
12
© NXP B.V. 2010. All rights reserved.
003aae308
003aae369
V
I
D
GS
Max
1.2
-
-
(A)
(V)
100
16
Unit
V
ns
nC
7 of 14