BUK653R7-30C NXP Semiconductors, BUK653R7-30C Datasheet - Page 8

• Manufacturer Part Number: BUK653R7-30C
• Description: MOSFET,N CH,30V,100A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK653R7-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK653R7-30C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(mΩ)
R
V
DSon
GS(th)
(V)
16
12
4
3
2
1
0
8
4
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
V
GS
(V) = 3.8
25
0
4.0
max
min
typ
60
50
120
75
All information provided in this document is subject to legal disclaimers.
003aae368
003aad805
I
T
4.5
D
j
(A)
(°C)
5.0
6.0
10
100
180
Rev. 3 — 13 October 2010
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
1.5
0.5
N-channel TrenchMOS intermediate level FET
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
1
BUK653R7-30C
min
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
T
GS
j
( ° C)
03aa27
(V)
180
4
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