BUK653R7-30C NXP Semiconductors, BUK653R7-30C Datasheet - Page 2

• Manufacturer Part Number: BUK653R7-30C
• Description: MOSFET,N CH,30V,100A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK653R7-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK653R7-30C
Product data sheet
Pin
1
2
3
mb
Type number
BUK653R7-30C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 13 October 2010
Simplified outline
SOT78A (TO-220AB)
Conditions
I
R
T
V
see
D
D
…continued
j(init)
GS
GS
= 100 A; V
= 25 A; V
Figure 14
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
1 2
mb
3
N-channel TrenchMOS intermediate level FET
DS
sup
GS
= 24 V;
≤ 30 V;
Figure
= 10 V;
13;
Graphic symbol
BUK653R7-30C
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
20
Version
SOT78A
Max Unit
242
-
2 of 14
mJ
nC