T1989N18TOF Infineon Technologies, T1989N18TOF Datasheet - Page 5

• Manufacturer Part Number: T1989N18TOF
• Description: Discrete Semiconductor Modules 1800V 1990A
• Manufacturer: Infineon Technologies
• Type: Discrete Semiconductor Moduler

Specifications of T1989N18TOF

• Mounting Style: Through Hole
• Output Current: 4200 A
• Reverse Voltage: 1800 V
• Package / Case: T1989
• Gate Trigger Current: 250 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MA2-BE / 15 Aug 1995, K.-A. Rüther
N
Phase Control Thyristor
Kühlung / Cooling
kathodenseitig
cathode-sided
anodenseitig
anode-sided
Netz-Thyristor
Erhöhung des Z
two-sided
12.000
10.000
beidseitig
Rise of Z
8.000
6.000
4.000
2.000
0
0,9
th DC
for sinewave and rectangular current with different current conduction angles Θ
th DC
1,1
Grenzdurchlaßkennlinie / Limiting on-state characteristic i
∆Z
∆Z
∆Z
∆Z
∆Z
∆Z
[°C/W]
[°C/W]
[°C/W]
[°C/W]
[°C/W]
[°C/W]
bei Sinus und Rechteckströmen mit unterschiedlichen Stromflusswinkeln Θ
th Θ rec
th Θ rec
th Θ rec
th Θ sin
th Θ sin
th Θ sin
Datenblatt / Data sheet
1,3
Durchlasskennlinie
Θ = 180°
0,00111
0,00085
0,00184
0,00124
0,00277
0,00243
Z
Z
th Θ rec
th Θ sin
A 122/95
1,5
∆Z
T1989N
= Z
= Z
th Θ rec
T
V
vj
T
= T
th DC
th DC
[V]
Θ = 120°
0,00180
0,00119
0,00306
0,00180
0,00419
0,00317
/ ∆Z
vj max
1,7
+ Z
+ Z
th Θ sin
th Θ rec
th Θ sin
1,9
0,00230
0,00163
0,00396
0,00253
0,00512
0,00403
Θ = 90°
T
vj
= T
T
2,1
= f(v
vj max
T
0,00297
0,00227
0,00528
0,00368
0,00626
0,00517
Θ = 60°
)
Seite/page
2,3
0,00398
0,00333
0,00762
0,00610
0,00782
0,00684
Θ = 30°
2,5
5/10