T1989N18TOF Infineon Technologies, T1989N18TOF Datasheet - Page 9

• Manufacturer Part Number: T1989N18TOF
• Description: Discrete Semiconductor Modules 1800V 1990A
• Manufacturer: Infineon Technologies
• Type: Discrete Semiconductor Moduler

Specifications of T1989N18TOF

• Mounting Style: Through Hole
• Output Current: 4200 A
• Reverse Voltage: 1800 V
• Package / Case: T1989
• Gate Trigger Current: 250 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MA2-BE / 15 Aug 1995, K.-A. Rüther
N
Phase Control Thyristor
Netz-Thyristor
40
35
30
25
20
15
10
5
0
1
Typical dependency of maximum overload on-state current I
2
Typische Abhängigkeit des Grenzstromes I
3
sinusoidal half waves at 50Hz. Parameter: peak reverse voltage V
4
Halbwellen bei 50Hz. Parameter: Rückwärtsspannung V
Datenblatt / Data sheet
5
6
Number of pulses for 50Hz sinusoidal half waves
I
T(OV)M
Anzahl Pulse bei 50Hz Sinus Halbwellen
A 122/95
7
= f (pulses, V
T1989N
8
T(OV)M
9
RM
von der Anzahl für eine Folge von Sinus
) ; T
10
vj
= T
11
T(OV)M
vjmax
as a number of a sequence of
12
13
RM
RM
14
Seite/page
15
16
0-50V
0,33 VRRM
0,67 VRRM
17
9/10