BT151S-650R /T3 NXP Semiconductors, BT151S-650R /T3 Datasheet - Page 3

• Manufacturer Part Number: BT151S-650R /T3
• Description: SCRs TAPE13 SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650R /T3

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151S-650R,118

NXP Semiconductors
BT151S_SER_L_R_5
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
Form factor a = I
f = 50 Hz
values
0
1
T(RMS)
/I
T(AV)
2
10
4
Rev. 05 — 9 October 2006
4
2.8
BT151S series L and R
10
2
2.2
conduction
(degrees)
angle
120
180
30
60
90
6
factor
1.9
form
1.57
2.8
2.2
1.9
a
4
T
I
T
n
j
I
initial = 25 C max
T(AV) (A)
t
p
© NXP B.V. 2006. All rights reserved.
001aab019
001aaa957
I
1.57
a =
TSM
t
Thyristors
10
8
3
98
T
107
116
125
mb(max)
( C)
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