BT151S-650R /T3 NXP Semiconductors, BT151S-650R /T3 Datasheet - Page 9

• Manufacturer Part Number: BT151S-650R /T3
• Description: SCRs TAPE13 SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650R /T3

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151S-650R,118

NXP Semiconductors
7. Package outline
Fig 13. Package outline SOT428 (DPAK)
BT151S_SER_L_R_5
Product data sheet
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT428
2.38
2.22
L
A
2
b
1
0.93
0.46
A
1
1
e
0.89
0.71
b
IEC
b
e
E
2
1
2
1.1
0.9
b
b
1
5.46
5.00
b
2
3
TO-252
JEDEC
0.56
0.20
c
A
w
0
D
L
M
1
REFERENCES
A
6.22
5.98
D
H
1
Rev. 05 — 9 October 2006
D
min
D
4.0
mounting
base
2
L
JEITA
SC-63
1
scale
6.73
6.47
E
5
c
A
1
4.45
min
E
A
1
y
BT151S series L and R
2.285
e
4.57
10 mm
e
1
10.4
H
9.6
D
PROJECTION
EUROPEAN
2.95
2.55
L
E
1
min
0.5
L
1
© NXP B.V. 2006. All rights reserved.
0.9
0.5
L
2
ISSUE DATE
06-02-14
06-03-16
0.2
w
D
Thyristors
2
SOT428
max
0.2
y
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