BT151S-650R /T3 NXP Semiconductors, BT151S-650R /T3 Datasheet - Page 8

• Manufacturer Part Number: BT151S-650R /T3
• Description: SCRs TAPE13 SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650R /T3

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151S-650R,118

NXP Semiconductors
BT151S_SER_L_R_5
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H
3
2
1
0
junction temperature
50
0
50
100
001aaa950
T
j
( C)
150
Rev. 05 — 9 October 2006
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
D
10
10
10
/dt
BT151S series L and R
10
4
3
2
(1) R
(2) Gate open circuit
function of junction temperature; minimum
values
0
GK
= 100
(2)
(1)
50
100
© NXP B.V. 2006. All rights reserved.
T
j
001aaa949
( C)
150
Thyristors
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