BT151S-650R /T3 NXP Semiconductors, BT151S-650R /T3 Datasheet - Page 7

• Manufacturer Part Number: BT151S-650R /T3
• Description: SCRs TAPE13 SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650R /T3

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151S-650R,118

NXP Semiconductors
BT151S_SER_L_R_5
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
Fig 9. On-state current as a function of on-state
V
GT(25 C)
V
(1) T
(2) T
(3) T
(A)
GT
I
T
1.6
1.2
0.8
0.4
30
20
10
0
junction temperature
V
R
voltage
50
0
j
j
j
o
s
= 125 C; typical values
= 125 C; maximum values
= 25 C; maximum values
= 1.06 V
= 0.0304
0.5
0
50
1
(1)
(2)
100
1.5
(3)
001aaa953
T
001aaa959
V
j
T
( C)
(V)
150
Rev. 05 — 9 October 2006
2
Fig 8. Normalized gate trigger current as a function of
Fig 10. Normalized latching current as a function of
I
GT(25 C)
I
L(25 C)
I
GT
I
L
BT151S series L and R
3
2
1
0
3
2
1
0
junction temperature
junction temperature
50
50
0
0
50
50
100
100
© NXP B.V. 2006. All rights reserved.
001aaa952
T
001aaa951
T
j
j
( C)
( C)
150
150
Thyristors
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