BFP 410 H6327 Infineon Technologies, BFP 410 H6327 Datasheet - Page 6

• Manufacturer Part Number: BFP 410 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BFP 410 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Other names: BFP410H6327XT

Collector current I
V
DC current gain h
V
CE
CE
mA
10
10
10
10
10
10
10
10
10
10
10
=2 V
=2 V
-1
-2
-3
-4
0.2
2
1
0
3
2
1
0
10
-1
0.4
10
FE
C
0.6
0
= ƒ (V
= ƒ (I
C
0.8
BE
)
10
)
1
V
mA
V
I
C
BE
1.2
10
2
6
Collector current I
Parameter I
Base current reverse I
mA
10
10
10
10
10
10
µA
25
15
10
-1
-2
-3
-4
-5
5
0
0
0
0
B
1
0.5
C
2
= ƒ (V
B
1
= ƒ (V
CE
3
2010-04-09
)
EB
V
)
BFP410
V
V
V
160µA
90µA
20µA
CE
EB
2
5