BFP 410 H6327 Infineon Technologies, BFP 410 H6327 Datasheet - Page 7
BFP 410 H6327
Manufacturer Part Number
BFP 410 H6327
Description
RF Bipolar Small Signal RF BIP TRANSISTORS
Manufacturer
Infineon Technologies
Datasheet
1.BFP_410_H6327.pdf
(8 pages)
Specifications of BFP 410 H6327
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Maximum Operating Frequency
25 GHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
40 mA
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Other names
BFP410H6327XT
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.3
Pin 1
4x
+0.1
-0.05
0.1
M
4
1
Package SOT343
2
1.3
±0.2
2.15
Pin 1
4
3
2
0.6
0.15
+0.1
-0.05
0.6
1.15
0.9
7
0.2
0.1 MAX.
0.2
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
1.1
0.1
M
A
0.9
0.15
±0.1
+0.1
-0.05
A
2010-04-09
BFP410