BFP 450 E6327 Infineon Technologies, BFP 450 E6327 Datasheet - Page 10

• Manufacturer Part Number: BFP 450 E6327
• Description: RF Bipolar Small Signal TRANS GP BJT NPN 4.5V 0.1A
• Manufacturer: Infineon Technologies

Specifications of BFP 450 E6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24000 MHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP450E6327XT

4
4.1
Table 3
Parameter
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
4.2
Table 4
Parameter
Transition frequency
Collector base capacitance
Collector emitter capacitance
Emitter base capacitance
Data Sheet
Electrical Characteristics
DC Characteristics
DC Characteristics at
General AC Characteristics
General AC Characteristics at
T
A
= 25 °C
Symbol
V
I
I
I
h
Symbol
f
C
C
C
T
CES
CBO
EBO
FE
(BR)CEO
CB
CE
EB
T
A
= 25 °C
Min.
4.5
–
–
–
–
60
50
Min.
18
–
–
–
10
Typ.
5
–
1
1
0.1
95
85
Typ.
24
0.48
1.2
1.7
Values
Values
Max.
–
10
30
30
3
130
120
Max.
–
0.8
–
–
Unit
V
µA
nA
nA
µA
Unit
GHz
pF
pF
pF
Electrical Characteristics
Note / Test Condition
I
Open base
V
V
Emitter/base shortened
V
Open emitter
V
Open collector
V
V
Pulse measured
Note / Test Condition
V
f
V
f
Emitter grounded
V
f
Base grounded
V
f
Collector grounded
Revision 1.0, 2010-10-22
C
= 1 GHz
= 1 MHz
= 1 MHz
= 1 MHz
CE
CE
CB
EB
CE
CE
CE
CB
CE
EB
= 1 mA,
= 15 V,
= 3 V,
= 3 V,
= 0.5 V,
= 4 V,
= 3 V,
= 3 V,
= 3 V,
= 3 V,
= 0.5 V,
V
I
I
I
I
V
V
I
E
C
C
C
B
V
BE
BE
BE
I
V
= 0
= 50 mA
= 90 mA
= 90 mA,
= 0
C
BE
CB
= 0
= 0 V
= 0 V
= 0
BFP450
= 0
= 0 V