BFP 450 E6327 Infineon Technologies, BFP 450 E6327 Datasheet - Page 9
BFP 450 E6327
Manufacturer Part Number
BFP 450 E6327
Description
RF Bipolar Small Signal TRANS GP BJT NPN 4.5V 0.1A
Manufacturer
Infineon Technologies
Datasheet
1.BFP_450_H6327.pdf
(27 pages)
Specifications of BFP 450 E6327
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24000 MHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
100 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP450E6327XT
3
Table 2
Parameter
Junction - soldering point
1)For calculation of R
Figure 1
Data Sheet
Thermal Characteristics
Thermal Resistance
Total Power Dissipation
thJA
please refer to Application Note Thermal Resistance AN077
1)
Symbol
R
600
600
500
500
400
400
300
300
200
200
100
100
thJS
0
0
0
0
P
Min.
–
tot
=
f
(
T
s
)
50
50
Typ.
–
Values
9
Ts [°C]
Ts [°C]
Max.
120
100
100
Unit
K/W
150
150
Thermal Characteristics
Revision 1.0, 2010-10-22
Note / Test Condition
–
BFP450