BLF6G22LS-100 NXP Semiconductors, BLF6G22LS-100 Datasheet - Page 6

• Manufacturer Part Number: BLF6G22LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22LS-100,112

NXP Semiconductors
8. Test information
BLF6G22LS-100
Product data sheet
Fig 6.
C1
INPUT PCB V1
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
The drawing is not to scale.
Component layout
Table 8
TB
C22
for list of components.
C3
C4
C5
C6
Table 8.
Component
C1
C2
C3, C4, C12, C13,
C17, C18
C8
C5, C6, C10, C15 multilayer ceramic chip capacitor
C7
C2
R1
R2
List of components (see
All information provided in this document is subject to legal disclaimers.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Rev. 3 — 12 November 2010
C7
C8
Figure
C10
C9
6)
C15
C14
C12
C16
C11
C13
C17
Value
5.6 pF
1.0 pF
1.5 μF
100 nF
1.5 pF
0.6 pF
C23
C18
BLF6G22LS-100
r
C19
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
C20
[1]
[1]
[1]
[1]
Remarks
SMD 0805; TDK or
capacitor of same
quality
SMD 0603; Murata or
capacitor of same
quality
OUTPUT PCB V2
© NXP B.V. 2010. All rights reserved.
TB
001aah700
C21
6 of 12