BLF6G22LS-100 NXP Semiconductors, BLF6G22LS-100 Datasheet - Page 7

• Manufacturer Part Number: BLF6G22LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22LS-100,112

NXP Semiconductors
BLF6G22LS-100
Product data sheet
Table 8.
[1]
Component
C9, C14
C11, C16
C19
C20
C21
C22
C23
R1
R2
American Technical Ceramics type 100B or capacitor of same quality.
List of components (see
All information provided in this document is subject to legal disclaimers.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
tantalum capacitor
electrolytic capacitor
SMD resistor
SMD resistor
Rev. 3 — 12 November 2010
Figure
6)
…continued
Value
220 nF
10 pF
1.1 pF
0.5 pF
20 pF
10 μF; 35 V
220 μF; 35 V
3.6 Ω
5.1 Ω
BLF6G22LS-100
Power LDMOS transistor
[1]
[1]
[1]
[1]
Remarks
SMD 1206; AVX or
capacitor of same
quality
© NXP B.V. 2010. All rights reserved.
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