BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet - Page 3

• Manufacturer Part Number: BLF6G10S-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10S-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 23@28VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10S-45,112

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G10S-45_3
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G10S-45 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
G
RL
η
ACPR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
p
= 25
in
= 350 mA; P
°
C per section; unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Characteristics
Application information
L
= 35 W (CW); f = 960 MHz.
DS
= 28 V; I
1
Rev. 03 — 20 January 2010
= 922.5 MHz; f
Dq
= 350 mA; T
2
= 927.5 MHz; f
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
= 2.52 A
case
= 0 V; I
= 10 V; I
= 28 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
Conditions
P
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
L(AV)
= 25
D
DS
D
D
D
= 1.0 W
= 1.0 W
= 1.0 W
= 1.0 W
= 0.5 mA
+ 3.75 V;
DS
+ 3.75 V;
°
3
C; unless otherwise specified; in a
= 72 mA
= 430 mA
= 3.6 A
= 952.5 MHz; f
= 28 V
= 0 V
BLF6G10S-45
Power LDMOS transistor
Min
21.8
5.5
7
-
Min
65
1.35
1.7
-
-
-
-
-
4
= 957.5 MHz;
DS
Typ
23
9
8
−48.5 −45.5
Typ
-
1.9
2.15
-
12.5
-
5
0.2
= 28 V;
© NXP B.V. 2010. All rights reserved.
Max
24.5
-
-
Max
-
2.35
2.7
1.4
-
140
-
-
3 of 10
Unit
dB
dB
%
dBc
Unit
V
V
V
μA
A
nA
S
Ω