BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet - Page 6

• Manufacturer Part Number: BLF6G10S-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10S-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 23@28VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10S-45,112

NXP Semiconductors
BLF6G10S-45_3
Product data sheet
Table 8.
All capacitors should be soldered vertically.
[1]
[2]
Component
C1
C2
C3
C4
C5
C6
C7
C8, C11, C14
C9, C10, C12, C13 multilayer ceramic chip capacitor 330 nF;
C15
C16
F1
Q3
R1
R2
Fig 7.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
and thickness = 0.76 mm.
See
Component layout for 920 MHz and 960 MHz test circuit for 2-carrier W-CDMA
C1
List of components (see
Table 8
BLF6G10S-45
C8
INPUTBOARD
Description
multilayer ceramic chip capacitor 3.0 pF
multilayer ceramic chip capacitor 1 pF
multilayer ceramic chip capacitor 6.2 pF
multilayer ceramic chip capacitor 1.8 pF
multilayer ceramic chip capacitor 1.0 pF
multilayer ceramic chip capacitor 6.8 pF
multilayer ceramic chip capacitor 6.8 pF
multilayer ceramic chip capacitor 4.5 μF;
Electrolytic capacitor
Ferrite SMD bead
BLF6G10S-45
SMD resistor
SMD resistor
multilayer ceramic chip capacitor 68 pF
for list of components.
TP
Rev. 03 — 20 January 2010
C2 C3
C9
C10
R1
C11
Figure 6
C4
and
Figure
Value
50 V
50 V
220 μF
-
-
4.7 Ω;
0.1 W
6.8 Ω;
0.1 W
C12 C13
C5
7).
C14
C6
F1
C15
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[2]
[2]
BLF6G10S-45
R2
Remarks
Ferroxcube BDS 3/3/8.9-4S2
or equivalent
Power LDMOS transistor
−
+
BLF6G10S-45
OUTPUTBOARD
TP
C16
C7
© NXP B.V. 2010. All rights reserved.
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r
= 3.5
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