BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet - Page 4

• Manufacturer Part Number: BLF6G10S-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10S-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 23@28VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10S-45,112

NXP Semiconductors
BLF6G10S-45_3
Product data sheet
Fig 1.
Fig 2.
(dB)
G
p
25
23
21
19
17
15
V
One-tone CW power gain and drain efficiency as functions of load power; typical values
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
DS
= 960.1 MHz.
= 28 V; I
= 28 V; I
20
Dq
Dq
= 350 mA; f = 960 MHz.
= 350 mA; f
40
1
= 960 MHz;
(dB)
G
p
25
23
21
19
17
15
60
P
0
L(PEP)
η
G
D
001aaf992
p
(W)
10
Rev. 03 — 20 January 2010
80
70
55
40
25
10
−5
(%)
η
D
20
Fig 3.
30
(dBc)
IMD
−30
−60
−90
0
0
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
40
2
DS
= 960.1 MHz.
001aaf991
η
G
P
D
L
= 28 V; I
p
(W)
50
20
75
60
45
30
15
0
Dq
(%)
η
D
= 350 mA; f
BLF6G10S-45
40
Power LDMOS transistor
1
= 960 MHz;
IMD3
IMD5
IMD7
60
P
© NXP B.V. 2010. All rights reserved.
L(PEP)
001aaf993
(W)
80
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