BFG540W/X T/R NXP Semiconductors, BFG540W/X T/R Datasheet
BFG540W/X T/R
Specifications of BFG540W/X T/R
Related parts for BFG540W/X T/R
BFG540W/X T/R Summary of contents
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DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 DISCRETE SEMICONDUCTORS 2000 May 23 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc ...
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... NXP Semiconductors NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j Note the temperature at the soldering point of the collector pin. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER V collector-base breakdown (BR)CBO voltage V collector-emitter breakdown (BR)CES voltage V emitter-base breakdown (BR)EBO voltage I collector cut-off current CBO h DC current gain FE f transition frequency T C collector capacitance c C emitter capacitance ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 250 handbook, halfpage h FE 200 150 100 50 0 −2 − Fig.4 DC current gain as a function of collector current; typical values. 12 handbook, halfpage f T (GHz GHz; T amb Fig.6 Transition frequency as a function of collector current; typical values. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 30 handbook, halfpage gain (dB) 20 MSG 900 MHz Fig.7 Gain as a function of collector current; typical values. 50 handbook, halfpage gain (dB MSG mA Fig.9 Gain as a function of frequency; typical values. 2000 May 23 MLC045 handbook, halfpage G max (mA) C MLC047 handbook, halfpage ...
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... NXP Semiconductors NPN 9 GHz wideband transistor −20 handbook, halfpage d im (dB) −30 −40 −50 −60 − 500 mV 793.25 MHz Fig.11 Intermodulation distortion as a function of collector current; typical values. 4 handbook, halfpage F (dB 2000 MHz 2 1000 MHz 900 MHz 1 500 MHz Fig.13 Minimum noise figure as a function of collector current ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 4 handbook, halfpage F (dB Fig.15 Minimum noise figure as a function of frequency; typical values. 2000 May 23 MLC050 handbook, halfpage F min (dB (MHz Fig.16 Associated available gain as a function of 8 Product specification BFG540W/X; BFG540W/ ass min (MHz frequency; typical values. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth unstable region 180 f = 900 MHz mA Fig.17 Common emitter noise figure circles; typical values. handbook, full pagewidth 180 = 50 GHz mA Fig.18 Common emitter noise figure circles; typical values. 2000 May 135 0.5 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth o 180 = 50 mA Fig.19 Common emitter input reflection coefficient (s handbook, full pagewidth 180 mA Fig.20 Common emitter forward transmission coefficient (s 2000 May 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 o 135 135 40 MHz 3 GHz o 50 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 mA Fig.21 Common emitter reverse transmission coefficient (s handbook, full pagewidth o 180 = 50 mA Fig.22 Common emitter output reflection coefficient (s 2000 May GHz o 135 40 MHz o 0.25 0.20 0.15 0.10 0.05 o 135 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor SPICE parameters for the BFG540W crystal SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE XTF 27 VTF 28 ITF 29 PTF 30 CJC 31 VJC 32 MJC 33 XCJC 34 TR (1) 35 CJS 2000 May 23 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 0.3 0.8 0.5 OUTLINE VERSION IEC SOT343N 2000 May scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 0.3 0.5 0.8 OUTLINE VERSION IEC SOT343R 2000 May scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...