BFG540W/X T/R NXP Semiconductors, BFG540W/X T/R Datasheet - Page 12

• Manufacturer Part Number: BFG540W/X T/R
• Description: RF Bipolar Small Signal NPN 8V 120mA 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/X T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Other names: BFG540W/X,115

NXP Semiconductors
SPICE parameters for the BFG540W crystal
2000 May 23
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2
3
4
5
6
7
8
9
10
11
12
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14
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23
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SEQUENCE No.
NPN 9 GHz wideband transistor
(1)
(1)
(1)
(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
PARAMETER
1.045
184.3
0.981
41.69
10.00
232.4
2.028
43.99
0.992
2.097
166.2
129.8
1.064
5.000
1.000
5.000
353.5
1.340
0.000
1.110
3.000
1.978
600.0
0.332
7.457
11.40
3.158
156.9
0.000
793.7
185.5
0.084
0.150
1.598
0.000
VALUE
fA


V
A
fA



V
mA
aA


A

m


eV

pF
mV

ps

V
mA
deg
fF
mV


ns
F
UNIT
12
Note
1. These parameters have not been extracted, the
List of components (see Fig.23).
36
37
38
C
C
C
L1
L2
L3
L
L
handbook, halfpage
SEQUENCE No.
B
E
be
cb
ce
QL
f
Fig.23 Package equivalent circuit SOT343N;
c
(1)
(1)
default values are shown.
= scaling frequency = 1 GHz.
B
B
= 50; QL
DESIGNATION
C be
SOT343R.
L1
BFG540W/X; BFG540W/XR
E
= 50; QL
L B
VJS
MJS
FC
B,E
PARAMETER
(f) = QL
B'
C cb
E'
E
B,E
L3
L E
C'
(f/f
c
)
Product specification
750.0
0.000
0.814
70
50
115
0.34
0.10
0.25
0.40
0.40
VALUE
VALUE
BFG540W
C
MBC964
L2
ce
mV


fF
fF
fF
nH
nH
nH
nH
nH
UNIT
UNIT
C