BFG540W/X T/R NXP Semiconductors, BFG540W/X T/R Datasheet - Page 8

• Manufacturer Part Number: BFG540W/X T/R
• Description: RF Bipolar Small Signal NPN 8V 120mA 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/X T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Other names: BFG540W/X,115

NXP Semiconductors
2000 May 23
handbook, halfpage
NPN 9 GHz wideband transistor
V
Fig.15 Minimum noise figure as a function of
CE
(dB)
= 8 V.
F
4
3
2
0
1
10
frequency; typical values.
2
10
3
I
C
f (MHz)
= 40 mA
10 mA
MLC050
10
4
8
handbook, halfpage
Fig.16 Associated available gain as a function of
V
CE
F min
(dB)
= 8 V.
5
4
3
2
1
0
10
40 mA
2
10 mA
frequency; typical values.
BFG540W/X; BFG540W/XR
I C = 10 mA
F min
40 mA
10
G ass
3
f (MHz)
Product specification
BFG540W
MRA761
10
−5
15
20
10
0
G ass
5
4
(dB)