SI4110DY-T1-GE3 Vishay, SI4110DY-T1-GE3 Datasheet

MOSFET N-CH 80V 17.3A 8-SOIC

SI4110DY-T1-GE3

Manufacturer Part Number
SI4110DY-T1-GE3
Description
MOSFET N-CH 80V 17.3A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4110DY-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 11.7A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
17.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
2205pF @ 40V
Power - Max
7.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.013 Ohm @ 10 V
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.7 A
Power Dissipation
3600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
17.3A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
13mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4110DY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4110DY-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
30 888
Part Number:
SI4110DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
9 179
Part Number:
SI4110DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4110DY-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 68766
S-81713-Rev. A, 04-Aug-08
Ordering Information: Si4110DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
80
(V)
G
S
S
S
C
= 25 °C.
1
2
3
4
0.013 at V
R
DS(on)
Top View
SO-8
GS
J
(Ω)
= 150 °C)
= 10 V
b, d
8
7
6
5
N-Channel 80-V (D-S) MOSFET
D
D
D
D
I
D
17.3
(A)
Steady State
a
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
35 nC
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Primary Side Switch
• Half Bridge
• Intermediate Bus Converter
Typical
29
13
g
Tested
®
Power MOSFET
- 55 to 150
11.7
9.4
3.6
2.3
Limit
± 20
17.3
13.9
61.3
3
6.5
7.8
260
80
60
35
b, c
5
b, c
b, c
b, c
b, c
Maximum
35
16
Vishay Siliconix
G
Si4110DY
N-Channel MOSFET
www.vishay.com
D
S
°C/W
Unit
Unit
mJ
RoHS
°C
COMPLIANT
W
V
A
1

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SI4110DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4110DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4110DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Drain Current 11 Total Gate Charge (nC) g Gate Charge Document Number: 68766 S-81713-Rev. A, 04-Aug-08 New Product = 3000 2400 1800 1200 Si4110DY Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss 600 C rss Drain-to-Source Voltage (V) DS Capacitance 2 ...

Page 4

... Si4110DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.04 0.03 0. °C J 0.01 0.8 1.0 1.2 = 250 µA 75 100 125 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4110DY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si4110DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 - Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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