SI4110DY-T1-GE3 Vishay, SI4110DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4110DY-T1-GE3
• Description: MOSFET N-CH 80V 17.3A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4110DY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 17.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2205pF @ 40V
• Power - Max: 7.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.7 A
• Power Dissipation: 3600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17.3A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4110DY-T1-GE3TR

Si4110DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
10
5
4
3
2
1
0
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
T
0.4
J
J
25
- Temperature (°C)
= 150 °C
0.6
50
I
D
Limited by R
= 250 µA
0.01
100
0.1
75
10
1
0.1
0.8
T
J
= 25 °C
100
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
A
GS
DS(on)
= 25 °C
1.0
> minimum V
125
V
DS
*
New Product
- Drain-to-Source Voltage (V)
150
1.2
1
GS
at which R
BVDSS Limited
10
DS(on)
0.04
0.03
0.02
0.01
is specified
150
120
90
60
30
0
0
0.01
4
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
100
10 ms
10 s
100 µs
1 ms
100 ms
1 s
DC
5
V
GS
- Gate-to-Source Voltage (V)
0.1
6
Time (s)
7
S-81713-Rev. A, 04-Aug-08
Document Number: 68766
T
J
T
J
= 125 °C
1
= 25 °C
8
9
10
10