SI4110DY-T1-GE3 Vishay, SI4110DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4110DY-T1-GE3
• Description: MOSFET N-CH 80V 17.3A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4110DY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 17.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2205pF @ 40V
• Power - Max: 7.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.7 A
• Power Dissipation: 3600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17.3A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4110DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68766
S-81713-Rev. A, 04-Aug-08
10
8
6
4
2
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
20
15
10
5
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
25
150
Power, Junction-to-Ambient
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4110DY
www.vishay.com
125
150
5