SI4110DY-T1-GE3 Vishay, SI4110DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4110DY-T1-GE3
• Description: MOSFET N-CH 80V 17.3A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4110DY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 17.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2205pF @ 40V
• Power - Max: 7.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.7 A
• Power Dissipation: 3600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17.3A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4110DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68766
S-81713-Rev. A, 04-Aug-08
0.014
0.013
0.012
0.011
0.010
0.009
60
48
36
24
12
10
0
8
6
4
2
0
0
0
0
I
D
= 11.7 A
On-Resistance vs. Drain Current
V
12
GS
2
V
DS
10
Output Characteristics
= 10 thru 4 V
Q
- Drain-to-Source Voltage (V)
g
V
- Total Gate Charge (nC)
I
V
GS
D
DS
Gate Charge
- Drain Current (A)
24
4
= 10 V
= 40 V
20
V
GS
36
= 6 V
6
V
DS
V
GS
30
= 64 V
48
= 5 V
8
New Product
10
40
60
3000
2400
1800
1200
600
2.1
1.8
1.5
1.2
0.9
0.6
10
0
- 50
8
6
4
2
0
0
0
I
On-Resistance vs. Junction Temperature
D
C
= 11.7 A
- 25
rss
C
oss
1
V
V
DS
Transfer Characteristics
20
GS
T
0
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
2
Capacitance
25
C
iss
T
C
= 125 °C
50
40
T
Vishay Siliconix
3
C
= 25 °C
T
C
V
GS
75
= - 55 °C
Si4110DY
= 10 V
4
www.vishay.com
100
60
5
125
150
80
6
3