SIB417EDK-T1-GE3 Vishay, SIB417EDK-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SIB417EDK-T1-GE3
• Description: MOSFET P-CH 8V 9A SC75-6
• Manufacturer: Vishay

Specifications of SIB417EDK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 565pF @ 4V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 222mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB417EDK-T1-GE3TR

SiB417EDK
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
I
C
I
DS(on)
V
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
DS
g
R
I
SM
t
t
t
oss
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
a
b
r
f
rr
g
g
/T
/T
J
J
I
F
V
I
V
D
= - 4.6 A, dI/dt = 100 A/µs, T
DS
V
V
DS
≅ - 4.6 A, V
DS
DS
= - 4 V, V
V
= - 4 V, V
V
V
V
V
V
V
V
= - 8 V, V
V
V
= - 4 V, V
GS
V
V
DS
GS
GS
GS
GS
I
DS
DS
GS
DD
S
DS
DS
= - 1.5 V, I
= - 4.6 A, V
Test Conditions
≤ - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 1.2 V, I
= 0 V, V
= - 4 V, R
= 0 V, I
= - 4 V, I
= - 8 V, V
I
D
T
GS
f = 1 MHz
GEN
GS
C
= - 250 µA
GS
GS
GS
= 25 °C
, I
= - 4.5 V, I
= - 5 V, I
D
D
GS
= 0 V, T
= - 4.5 V, R
= 0 V, f = 1 MHz
GS
D
= - 250 µA
D
= - 250 µA
L
D
D
D
D
GS
GS
= - 5.8 A
= ± 4.5 V
= - 0.75 A
= 0.87 Ω
= - 4.5 V
= - 5.8 A
= - 5.0 A
= - 1.5 A
= - 0.1 A
= 0 V
= 0 V
D
J
D
= 55 °C
= - 5.8 A
= - 5.8 A
J
g
= 25 °C
= 1 Ω
- 0.35
Min.
- 15
1.9
- 8
0.042
0.058
0.081
0.096
0.150
Typ.
- 6.1
- 0.8
0.95
1.35
565
215
138
S09-1500-Rev. B, 10-Aug-09
2.1
7.3
9.5
11
12
31
30
17
32
13
14
18
8
Document Number: 68699
± 100
0.058
0.080
0.100
0.130
0.250
Max.
46.5
- 1.2
- 10
- 15
- 1
- 1
- 9
12
11
19
18
45
26
48
20
mV/°C
Unit
µA
nC
nC
pF
ns
ns
ns
V
V
A
Ω
S
Ω
A
V