SIB417EDK-T1-GE3 Vishay, SIB417EDK-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIB417EDK-T1-GE3
• Description: MOSFET P-CH 8V 9A SC75-6
• Manufacturer: Vishay

Specifications of SIB417EDK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 565pF @ 4V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 222mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB417EDK-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68699
S09-1500-Rev. B, 10-Aug-09
1.5
1.2
0.9
0.6
0.3
0.0
15
12
9
6
3
0
0
0
Package Limited
25
25
Power Junction-to-Ambient
T
A
T
- Ambient Temperature (°C)
C
Current Derating**
50
50
- Case Temperature (°C)
75
75
100
100
0.01
100
0.1
10
1
0.1
125
125
Single Pulse
* V
T
Safe Operating Area, Junction-to-Case
A
GS
= 25 °C
> minimum V
V
150
150
DS
Limited by R
- Drain-to-Source Voltage (V)
GS
at which R
DS(on)
** The power dissipation P
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
1
*
DS(on)
16
12
8
4
0
BVDSS
Limited
0
is specified
25
100 µs
1 ms
DC
10 ms
100 ms
1 s
10 s
10
Power Junction-to-Case
T
C
D
50
- Case Temperature (°C)
is based on T
75
Vishay Siliconix
SiB417EDK
100
J(max)
www.vishay.com
= 150 °C, using
125
150
5