SIB417EDK-T1-GE3 Vishay, SIB417EDK-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIB417EDK-T1-GE3
• Description: MOSFET P-CH 8V 9A SC75-6
• Manufacturer: Vishay

Specifications of SIB417EDK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 565pF @ 4V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 222mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB417EDK-T1-GE3TR

SiB417EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
5000
4000
3000
2000
1000
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
- 50
0
1
0.0
0
Gate Source Voltage vs. Gate Current
Soure-Drain Diode Forward Voltage
- 25
1
0.2
V
V
SD
GS
0
2
- Source-to-Drain Voltage (V)
Threshold Voltage
- Gate-to-Source Voltage (V)
T
J
T
25
J
- Temperature (°C)
3
0.4
= 150 °C
I
D
= 250 µA
50
4
0.6
I
75
GSS
5
at 25 °C
100
6
0.8
T
J
= 25 °C
125
7
150
1.0
8
10 000
0.001
1000
0.20
0.16
0.12
0.08
0.04
0.00
0.01
100
0.1
10
20
15
10
1
5
0
0.001
0.1
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Gate Source Voltage vs. Gate Current
0.01
1
V
V
GS
GS
I
GSS
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
at 150 °C
I
0.1
GSS
2
Time (s)
at 25 °C
S09-1500-Rev. B, 10-Aug-09
1
Document Number: 68699
3
1
I
T
D
T
J
= 5.8 A
J
10
= 25 °C
4
= 125 °C
100
10
5