BLF6G20LS-140,118 NXP Semiconductors, BLF6G20LS-140,118 Datasheet - Page 57

• Manufacturer Part Number: BLF6G20LS-140,118
• Description: IC BASESTATION FINAL SOT896B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-140,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.93GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 35.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 39 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060897118; BLF6G20LS-140 /T3; BLF6G20LS-140 /T3

MMIC: General-purpose medium-power amplifiers, 50-Ω blocks
MMIC: Two-stage, variable-gain linear amplifier
MMIC: General-purpose wideband amplifiers, 50-Ω gain blocks
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/mmics
(1)
(1)
(1)
Product
BGA6289
BGA6489
BGA6589
Product
BGA2031/1
Product
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
BGA2712
BGM1011
BGM1012
BGM1013
BGM1014
BGA2714
BGA2715
BGA2716
BGA2717
Device voltage without bias resistor
Gain = Gp, power gain
Upper -3 dB point, to gain at 1 GHz
Package
SOT89
SOT89
SOT89
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Package
SOT363
(2)
DG = Gain control range
VS
(V)
5
3
3
5
5
5
5
3
5
5
3
5
5
5
VS
4.1
5.1
4.8
(V)
VS
(V)
3
(2)
(1)
(2)
Gain = |S
@
Optimized parameter
@
@
14.6
15.9
(mA)
4.3
12.6
33.3
24.4
23.5
12.3
25.5
27.5
21
5.7
4.6
(mA)
Is
8
Is (mA)
51
Is
(2)
(2)
(2)
(2)
84
78
81
21
|
2
Frequency
@ -3 dB
800-2500
(GHz)
3.6
f
range
(MHz)
1.9
2.4
2.8
3.6
3.2
3.6
2.1
2.5
2.7
3.3
3.2
3.2
NF (dB)
U
(1)
3.5
3.1
3.0
(2)
(3)
Gain = |S
NF (dB)
1.9
2.3
4.8
4.5
4.9
4.0
3.9
4.7
4.8
4.6
4.2
2.2
2.6
5.3
Gain
Gain
(dB)
(2)
(2)
15
20
22
(dB)
24
@ 900 MHz
21
(2)
|
2
(1)
(dBm)
13.2
Psat
10.5
12.5
13.8
14.0
12.9
11.6
-2.3
-3.4
-4.0
2.8
4.8
9.7
1.4
(dBm)
OIP3
(2)
DG
31
33
33
(dB)
62
@ 900 MHz
(2)
@ 1 GHz
Gain
23.2
30.0
35.5
13.1
21.8
21.4
22.7
21.3
20.1
32.3
20.4
21.7
22.9
23.9
(dB)
(dBm)
(3)
(2)
(2)
(2)
P1dB
(dBm)
P1dB
17
20
21
11
(dBm)
P1dB
12.1
12.2
12.0
11.2
-0.7
-9.2
-8.0
-2.6
7.2
8.3
0.2
5.6
8.9
-8
NF (dB)
ACPR
3.7
3.3
3.3
(dBc)
49
(dBm)
OIP3
21.9
18.6
22.0
11.0
23.0
18.0
22.7
20.5
22.2
-1.9
8.3
2.3
10
2
Gain
Gain
(dB)
13
16
17
(dB)
@ 1800 MHz
23
100 MHz
(2)
(1)
13.0
14.8
20.3
22.4
22.2
20.8
25.0
19.5
35.2
30.0
20.8
13.3
22.1
18.6
(dBm)
OIP3
DG
28
30
32
(dB)
56
@ 1900 MHz
2.2 GHz
(2)
14.1
17.6
20.4
23.2
23.0
21.9
37.0
20.4
31.8
34.1
20.8
23.3
22.8
25.1
Gain
(3)
(dBm)
P1dB
(dBm)
P1dB
(dB) @
15
17
20
13
2.6 GHz
13.8
15.0
17.9
21.8
22.1
21.2
32.0
19.9
29.7
30.5
19.0
22.1
22.1
24
2.5 GHz
Gain
ACPR
(dBc)
3.0 GHz
12
15
15
49
12.8
11.9
15.5
19.3
21.1
19.3
28.0
18.7
26.1
26.4
16.8
20.1
20.8
22.1
(2)
VS
(V)
3.3
(V)
6
6
6
Vs
Vs
(V)
(1)
6
4
4
6
6
6
6
4
6
6
4
6
6
6
Is (mA)
Limits
Limits
Is (mA)
120
120
120
(mA)
Limits
77
Is
20
15
50
34
35
25
35
50
35
30
10
25
15
8
(mW)
(mW)
Ptot
(mW)
480
480
480
Ptot
200
Ptot
200
200
200
200
200
200
200
200
200
200
200
200
200
200
57