BF1100,215 NXP Semiconductors, BF1100,215 Datasheet - Page 2

• Manufacturer Part Number: BF1100,215
• Description: MOSFET N-CH 14V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF1100,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW @ Ta=50C
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 14V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
• Output Capacitance (typ)@vds: 1.4@9V/1.1@12VpF
• Reverse Capacitance (typ): 0.025@9V/0.025@12VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036550215; BF1100 T/R; BF1100 T/R

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
QUICK REFERENCE DATA
V
I
P
T
C
C
F
handbook, halfpage
D
y
Specially designed for use at 9 to 12 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
VHF and UHF applications such as television tuners and
professional communications equipment.
j
DS
tot
ig1-s
rs
Dual-gate MOS-FETs
BF1100 marking code: %MY.
SYMBOL
fs
Top view
Fig.1 Simplified outline (SOT143) and symbol.
4
1
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
3
2
MAM124
PARAMETER
g 2
g 1
d
Rev. 02 - 13 November 2007
s,b
f = 1 MHz
f = 800 MHz
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
handbook, halfpage
CONDITIONS
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
BF1100R marking code: %MZ.
Top view
PIN
Fig.2 Simplified outline (SOT143R) and symbol.
1
2
3
4
3
2
SYMBOL
1
s, b
g
g
d
4
2
1
24
MAM125 - 1
MIN.
CAUTION
source
drain
gate 2
gate 1
BF1100; BF1100R
28
2.2
25
2
TYP.
DESCRIPTION
Product specification
g
g 1
2
14
30
200
150
33
2.6
35
MAX.
d
2 of 15
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b