BF1100,215 NXP Semiconductors, BF1100,215 Datasheet - Page 5

• Manufacturer Part Number: BF1100,215
• Description: MOSFET N-CH 14V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF1100,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW @ Ta=50C
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 14V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
• Output Capacitance (typ)@vds: 1.4@9V/1.1@12VpF
• Reverse Capacitance (typ): 0.025@9V/0.025@12VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036550215; BF1100 T/R; BF1100 T/R

NXP Semiconductors
DYNAMIC CHARACTERISTICS
Common source; T
C
C
C
C
F
SYMBOL
y
ig1-s
ig2-s
os
rs
Dual-gate MOS-FETs
f = 50 MHz.
T
fs
reduction
j
handbook, halfpage
= 25 C.
Fig.5
gain
(dB)
10
20
30
40
50
0
0
Gain reduction as a function of the AGC
voltage; typical values.
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance f = 1 MHz
noise figure
amb
PARAMETER
1
= 25 C; V
2
G2-S
= 4 V; I
3
V
AGC
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; G
D
MLD157
= 10 mA; unless otherwise specified.
V
V
V
V
V
V
V
V
V
V
V
V
Rev. 02 - 13 November 2007
(V)
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
4
= 9 V
= 12 V
= 9 V
= 12 V
= 9 V
= 12 V
= 9 V
= 12 V
= 9 V
= 12 V
= 9 V
= 12 V
j
= 25 C
CONDITIONS
S
= G
handbook, halfpage
(1) R
(2) R
f
w
Fig.6
(dB V)
Sopt
V unw
= 50 MHz; f
120
110
100
G
G
; B
90
80
= 250 k to V
= 180 k to V
0
S
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.27.
= B
unw
Sopt
= 60 MHz; T
10
GG
GG
= 12 V
= 9 V
24
24
MIN.
20
amb
BF1100; BF1100R
= 25 C.
28
28
2.2
2.2
1.6
1.4
1.4
1.1
25
25
2
2
TYP.
30
gain reduction (dB)
Product specification
33
33
2.6
2.6
1.8
1.5
35
35
2.8
2.8
40
MAX.
(1)
(2)
MLD158
5 of 15
50
mS
mS
pF
pF
pF
pF
pF
pF
fF
fF
dB
dB
UNIT