BF1100,215 NXP Semiconductors, BF1100,215 Datasheet - Page 6

• Manufacturer Part Number: BF1100,215
• Description: MOSFET N-CH 14V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF1100,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW @ Ta=50C
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 14V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
• Output Capacitance (typ)@vds: 1.4@9V/1.1@12VpF
• Reverse Capacitance (typ): 0.025@9V/0.025@12VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036550215; BF1100 T/R; BF1100 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
Dual-gate MOS-FETs
V
T
V
T
j
j
G2-S
DS
( A)
(mA)
I G1
= 25 C.
= 25 C.
I D
= 9 to 12 V.
250
200
150
100
Fig.9
Fig.7 Output characteristics; typical values.
20
16
12
50
= 4 V.
8
4
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
4
1
V
G1 S
8
V
1.0 V
1.3 V
1.2 V
1.1 V
0.9 V
G2 S
= 1.4 V
= 4 V
2
3 V
3.5 V
2.5 V
2 V
V
12
G1 S
V
DS
MLD161
MLD159
(V)
(V)
Rev. 02 - 13 November 2007
16
3
handbook, halfpage
handbook, halfpage
V
T
V
T
j
j
DS
(mS)
DS
(mA)
Fig.10 Forward transfer admittance as a function
= 25 C.
= 25 C.
y fs
I D
= 9 to 12 V.
Fig.8 Transfer characteristics; typical values.
= 9 to 12 V.
20
16
12
40
30
20
10
8
4
0
0
0
0
of drain current; typical values.
0.4
10
0.8
V
G2 S
BF1100; BF1100R
= 4 V
1.2
2 V
20
V
Product specification
3 V
G2 S
I
1.6
D
V
2.5 V
2 V
1.5 V
1 V
(mA)
G1 S
3.5 V
3 V
2.5 V
= 4 V
MLD162
MLD160
6 of 15
(V)
2.0
30