BF1100,215 NXP Semiconductors, BF1100,215 Datasheet - Page 7

• Manufacturer Part Number: BF1100,215
• Description: MOSFET N-CH 14V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF1100,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW @ Ta=50C
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 14V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
• Output Capacitance (typ)@vds: 1.4@9V/1.1@12VpF
• Reverse Capacitance (typ): 0.025@9V/0.025@12VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036550215; BF1100 T/R; BF1100 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
Dual-gate MOS-FETs
V
V
T
V
R
Fig.11 Drain current as a function of gate 1 current;
Fig.13 Drain current as a function of gate 1 voltage
j
DS
G2-S
DS
G1
(mA)
(mA)
= 25 C.
I D
I D
= 9 to 12 V.
= 9 V; V
= 180 k
16
12
12
= 4 V.
8
4
0
8
4
0
0
0
typical values.
(= V
G2-S
connected to V
GG
= 4 V.
2
); typical values; see Fig.27.
20
4
GG
); T
40
j
= 25 C.
6
60
8
I
G1
V
GG
MLD163
MLD165
( A)
(V)
Rev. 02 - 13 November 2007
80
10
handbook, halfpage
handbook, halfpage
V
R
T
V
R
Fig.14 Drain current as a function of gate 1 voltage;
j
G2-S
Fig.12 Drain current as a function of gate 1 supply
DS
G1
(mA)
G1
(mA)
= 25 C.
I D
I D
connected to V
= 12 V; V
= 250 k (connected to V
20
15
10
12
= 4 V.
8
4
0
5
0
0
0
(= V
voltage (= V
typical values; see Fig.27.
G2-S
GG
= 4 V.
GG
); typical values; see Fig.27.
4
.
4
GG
R
GG
G1
) and drain supply voltage;
BF1100; BF1100R
); T
= 100 k
8
j
= 25 C.
V
GG
8
Product specification
= V
12
V
GG
DS
511 k
180 k
205 k
249 k
301 k
402 k
147 k
(V)
MLD166
(V)
MLD164
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