BLA1011-200,112 NXP Semiconductors, BLA1011-200,112 Datasheet - Page 2

• Manufacturer Part Number: BLA1011-200,112
• Description: TRANS LDMOS NCH 75V SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-200,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz
• Gain: 13dB
• Voltage - Rated: 75V
• Current Rating: 1µA
• Current - Test: 150mA
• Voltage - Test: 36V
• Power - Output: 200W
• Package / Case: SOT502A
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: Avionics
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 250W(Typ)
• Power Gain (typ)@vds: 15@36VdB
• Frequency (min): 1.03GHz
• Frequency (max): 1.09GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 9S
• Drain Source Resistance (max): 60(Typ)@9Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 700000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056468112; BLA1011-200; BLA1011-200

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
9397 750 14634
Product data sheet
Table 2:
[1]
Table 3:
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLA1011-200 (SOT502A)
1
2
3
BLA1011S-200 (SOT502B)
1
2
3
Type number
BLA1011-200
BLA1011S-200
Symbol
V
V
P
T
T
stg
j
DS
GS
tot
Connected to flange
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
-
Rev. 08 — 26 October 2005
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
BLA1011-200; BLA1011S-200
Conditions
T
h
25 C; t
[1]
[1]
p
Simplified outline
= 50 s; = 2 %
1
2
1
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Avionics LDMOS transistor
3
3
Symbol
Min
-
-
-
-
65
2
2
sym039
sym039
Max
75
700
+150
200
Version
SOT502A
SOT502B
22
1
3
1
3
2 of 13
Unit
V
V
W
C
C