BLA1011-200,112 NXP Semiconductors, BLA1011-200,112 Datasheet - Page 5

• Manufacturer Part Number: BLA1011-200,112
• Description: TRANS LDMOS NCH 75V SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-200,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz
• Gain: 13dB
• Voltage - Rated: 75V
• Current Rating: 1µA
• Current - Test: 150mA
• Voltage - Test: 36V
• Power - Output: 200W
• Package / Case: SOT502A
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: Avionics
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 250W(Typ)
• Power Gain (typ)@vds: 15@36VdB
• Frequency (min): 1.03GHz
• Frequency (max): 1.09GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 9S
• Drain Source Resistance (max): 60(Typ)@9Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 700000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056468112; BLA1011-200; BLA1011-200

Philips Semiconductors
9397 750 14634
Product data sheet
Fig 5. Power gain and drain efficiency a functions of
Fig 7. Load impedance as a function of frequency (series components); typical values
(dB)
G
20
15
10
p
1020
5
0
V
frequency; typical values
V
DS
DS
= 2 %
= 36 V; I
= 36 V; I
1040
Dq
Dq
G
= 150 mA; P
= 150 mA; P
p
1060
L
L
= 200 W; t
= 200 W; t
(W)
Z
D
1080
L
1020
4
2
0
2
4
f (MHz)
mgw037
p
p
= 50 s;
= 50 s; = 2 %
1100
Rev. 08 — 26 October 2005
1040
80
60
40
20
0
(%)
D
BLA1011-200; BLA1011S-200
1060
Fig 6. Input Impedance as a function of frequency
(W)
R
X
Z
L
L
1080
i
5
4
3
2
1
0
1020
V
(series components); typical values
DS
= 2 %
f (MHz)
= 36 V; I
mgw039
1100
r
x
1040
i
i
Dq
= 150 mA; P
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
1060
Avionics LDMOS transistor
L
= 200 W; t
1080
f (MHz)
p
mgw038
= 50 s;
1100
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