BLA1011-200,112 NXP Semiconductors, BLA1011-200,112 Datasheet - Page 8

TRANS LDMOS NCH 75V SOT502A

BLA1011-200,112

Manufacturer Part Number
BLA1011-200,112
Description
TRANS LDMOS NCH 75V SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLA1011-200,112

Transistor Type
LDMOS
Frequency
1.03GHz
Gain
13dB
Voltage - Rated
75V
Current Rating
1µA
Current - Test
150mA
Voltage - Test
36V
Power - Output
200W
Package / Case
SOT502A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
Avionics
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
75V
Output Power (max)
250W(Typ)
Power Gain (typ)@vds
15@36VdB
Frequency (min)
1.03GHz
Frequency (max)
1.09GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
9S
Drain Source Resistance (max)
60(Typ)@9Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Screw
Mode Of Operation
Class-AB
Number Of Elements
1
Power Dissipation (max)
700000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
 Details
Other names
934056468112
BLA1011-200
BLA1011-200
Philips Semiconductors
9. Package outline
Fig 9. Package outline SOT502A
9397 750 14634
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502A
0.186
0.135
4.72
3.43
H
A
U 2
A
A
12.83
12.57
0.505
0.495
b
0.006
0.003
0.15
0.08
c
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
q
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 08 — 26 October 2005
1
2
0.045
0.035
1.14
0.89
0
BLA1011-200; BLA1011S-200
F
3
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
M
0.210
0.170
5.33
4.32
C
10 mm
L
M
C
0.133
0.123
3.38
3.12
p
L
p
B
F
0.067
0.057
1.70
1.45
Q
w 1
M
27.94
1.100
A
q
M
B
PROJECTION
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
34.16
33.91
1.345
1.335
EUROPEAN
M
U 1
Avionics LDMOS transistor
E 1
0.390
0.380
9.91
9.65
U 2
c
Q
0.25
0.01
w 1
ISSUE DATE
99-12-28
03-01-10
0.51
0.02
w 2
E
SOT502A
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