MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 12

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

12
MRF6S20010NR1 MRF6S20010GNR1
Figure 19. Single - Carrier N - CDMA Broadband Performance
N - CDMA TYPICAL CHARACTERISTICS
15.9
15.8
15.7
15.6
15.5
15.4
15.3
15.2
15.1
14.9
50
40
30
20
10
15
1900
0
Figure 20. Single - Carrier N - CDMA ACPR and Drain
0.1
V
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13)
DD
V
f = 1960 MHz, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
1910
DD
= 28 Vdc, P
= 28 Vdc, I
1920
Efficiency versus Output Power
P
out
out
1930
DQ
, OUTPUT POWER (WATTS) AVG.
@ P
= 1 W (Avg.), I
= 130 mA
f, FREQUENCY (MHz)
1940
out
= 1 Watt Avg.
1950
1
DQ
IRL
η
= 500 mA
ACPR
1960
D
ACPR
1970
1980 1990
— 1930 - 1990 MHz
η
G
D
ps
2000
10
19
18
17
16
15
−59
−59.4
−59.8
−60.2
−60.6
−61
−40
−45
−50
−55
−60
−65
−8
−11
−14
−17
−20
Freescale Semiconductor
RF Device Data