MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 19

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

Table 9. Common Source Scattering Parameters
RF Device Data
Freescale Semiconductor
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
MH
MHz
f
0.923
0.927
0.937
0.937
0.942
0.945
0.946
0.950
0.949
0.952
0.950
0.958
0.953
0.957
0.960
|S
11
|
S
11
- 177.5
- 178.0
- 178.8
- 179.0
- 179.8
- 179.9
179.5
179.3
178.8
178.5
178.4
177.9
177.7
177.2
177.4
∠ φ
0.666
0.625
0.591
0.559
0.529
0.504
0.479
0.456
0.436
0.419
0.402
0.387
0.373
0.362
0.350
|S
21
|
(V
DD
S
21
= 28 V, I
- 1.378
- 2.768
- 4.088
- 5.412
- 6.305
- 7.279
- 8.087
- 9.138
- 9.904
- 10.86
- 11.79
5.462
3.680
1.864
0.237
∠ φ
DQ
= 126 mA, T
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.007
0.008
0.009
0.011
0.012
0.013
0.014
0.013
|S
12
A
|
= 25°C, 50 ohm system)
S
12
MRF6S20010NR1 MRF6S20010GNR1
42.56
52.25
60.26
64.14
65.62
64.71
67.58
75.44
82.04
83.60
83.41
81.35
77.45
70.98
67.00
∠ φ
(continued)
0.957
0.962
0.961
0.964
0.964
0.964
0.966
0.966
0.964
0.967
0.968
0.964
0.969
0.970
0.970
|S
22
|
S
22
- 177.2
- 177.8
- 178.4
- 179.1
- 179.6
179.7
179.4
178.8
178.3
177.9
177.4
176.8
176.4
176.2
175.5
∠ φ
19