MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 7

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
16
15
14
13
12
10
11
47
45
43
41
39
37
35
20
0
Figure 10. Power Gain versus Output Power
Figure 8. Pulsed CW Output Power versus
3
P1dB = 40.9 dBm (12.26 W)
22
P
out
, OUTPUT POWER (WATTS) CW
6
P
in
, INPUT POWER (dBm)
Input Power
P3dB = 41.5 dBm (14.2 W)
24
9
V
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2170 MHz
DD
DD
= 24 V
= 28 Vdc, I
12
10
10
10
10
Figure 12. MTTF Factor versus Junction Temperature
TYPICAL CHARACTERISTICS
26
8
7
6
5
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
DQ
28 V
15
= 130 mA
110
I
f = 2170 MHz
DQ
28
= 130 mA
18
130
T
DD
32 V
J
, JUNCTION TEMPERATURE (°C)
Actual
Ideal
= 28 Vdc, P
150
30
21
out
170
= 10 W PEP, and η
−18
−27
−36
27
18
−9
18
17
16
15
14
13
12
9
0
11
400
0.1
190
Figure 11. Broadband Frequency Response
V
P
I
V
I
f = 2170 MHz
DQ
DQ
T
DD
out
— 2110 - 2170 MHz
DD
C
Figure 9. Power Gain and Drain Efficiency
= 130 mA
= 130 mA
= 10 W (PEP)
= −30_C
= 28 Vdc
800
= 28 Vdc
85_C
25_C
210
D
= 36%.
1200
P
versus CW Output Power
230
out
, OUTPUT POWER (WATTS) CW
f, FREQUENCY (MHz)
S11
MRF6S20010NR1 MRF6S20010GNR1
1600
250
1
G
ps
η
D
2000
S21
2400
10
2800
−30_C
25_C
85_C
3200
30
6
3
0
−3
−6
−9
−12
−15
70
60
50
40
30
20
10
0
7